A line of gallium nitride (GaN) power transistors has been expanded to include discrete devices capable of output levels of 10, 30, 50, and 100 W for use through S-band frequencies. Based on a 0.5-μm high-electron-mobility-transistor (HEMT) process, the power transistors are supplied in push-pull thermally stable ceramic packages for ease of circuit installation. They are designed for broadband performance, meeting specific requirements of size, weight, and power (SWaP) in aerospace, defense, and radar applications. For example, model CLF1G0035S-50 provides 50 W output power from DC to 3.5 GHz when operating from a +50 V dc supply.

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