A high-power GaN transistor provides 285 W CW output power from DC to 2 GHz and is available in two different packages.
Model T1G2028536 is a high-power gallium-nitride (GaN) transistor from TriQuint Semiconductor—and supported by RFMW Ltd.—capable of 285-W continuous (CW) output power from DC to 2 GHz. Suitable for commercial and military applications, the transistor is available in a low-thermal-resistance housing as model T1G2028536-FS or in a flange-mount package as model T1G2028536-FL. The transistors deliver 18-dB linear gain at 1.2 GHz and draw 576 mA current from a +36-VDC supply. The transistors, which are prematched for L-band applications, are designed to provide as much as 65% power-added efficiency (PAE) in impedance-matched and optimized circuits.
RFMW Ltd. (stocking distributor for TriQuint), 188 Martinvale Lane, San Jose, CA 95119; (408) 414-1450.